E-Beam Evaporator Ohmiker-50B - M & R Technology
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The Ohmiker-50B System is specifically designed for pilot run and long-term reliability performance in E-beam Evaporation coating process. Togglenavigation Home Aboutus Products LithographyEquipment SpinCoaterandDeveloperUnits WetChemistryProcessingTool MaskAligner DirectImagingSystem NanoImprintLithography MiniLithographyTotalSolution PhotoResistandDeveloper ThinFilmDeposition PVDTechnology Sputter ThermalDeposition E-beamDeposition PulseLaserDeposition CVDTechnology CVD MOCVD PECVD AtomicLayerDeposition DryEtchingProcessEquipment Reactive-IonEtching(RIE) ICPRIE WaferBondingEquipment CleaningandCuringEquipments UltrasonicandMegasoniccleaner UVCleaner/Curing PlasmaCleaner HotPlateandVacuumOven GloveBox Wafers,Sputteringtargets,Precursors Services PhotoMaskMakingFacility CustomizedEquipmentDesign RefurbishingEquipment Downloads OurPartners Career News ContactUs E-BeamEvaporatorOhmiker-50B HomeE-BeamEvaporator E-BeamEvaporatorOhmiker-50B E-BeamEvaporatorOhmiker-50B Model: Ohmiker-50B TheOhmiker-50BSystemisspecificallydesignedforpilotrunandlong-termreliabilityperformanceinE-beamEvaporationcoatingprocess.Ithaddesignedfortheconformalor/andLift-Offmetal,opticalthinfilmscoatingprocess.ThesystemoffersallofthestandardfeaturesforE-beamevaporationsysteminaverycompactfootprint.Filmswithsuperiorthicknessuniformitycanbedepositedover12pcsof4″diameterwafer,withexcellentbatch-to-batchrepeatability.Acomputerizedtouchpanelprovidesauser-friendlyinterfaceforparametercontrolandrecipe storage.ThesystemisalsoidealfordepositingthinfilmsforhighqualityR&DLab.requested. APPLICATIONS DepositionofConformalmetalprocess. DepositionofITOprocess. DepositionofODR/DBRprocess. DepositionofLift-Offmetalprocess. FEATURES Providesthecapacitytoprocess6pcsof6″wafers,12pcsof4″wafers,and54pcsof2″wafersperbatchinacompactdesign,usingminimalcleanroomspace. Uniformdepositionrate,maximizesyield. PlanetaryDomes RevolveDome Fullyautomatic“one-button”operationwithfull manualoverride. Easy-to-usecomputerizetouchpanelfor parametercontrol,andrecipeentryandstorage. Supportsthecontinuousexecutionofmultipleprocesses,suchasmulti-layersdepositionforgreaterprocessflexibility. Completesetofsysteminterlocksprotectsthesystemandoperatorduringprocessing. DIMENSIONS Mainunit:W1,000mmxD1,500mmxH1,800mm OPITIONS IonBeamSource. MFCforgasinlet. Upgradeto350degreeC. 3-positionthrottlingvalve. Drypump. OpticalThicknessmonitor. Chiller.
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